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The Japan Industrial Technology Research Institute has developed a deep-UV LED using diamond as a semiconductor. The details will be released at the "56th Joint Conference on Applied Physics" (March 30-April 2, University of Tsukuba) held by the Applied Physics Society in the spring of 2009 (speech number: 1p-TC-9~ 10).
The deep-UV LED developed this time uses a design of stacking a pin-structured diamond semiconductor on a 2 mm square diamond substrate. A deep ultraviolet ray having an emission wavelength of 235 nm is used. The output power at a current of 320 mA is 30 μW. “At present, it is close to the practical level†(Shanqi Cong, a principal researcher at the Research Institute of Energy Technology, and a professor of the Department of Mathematical and Physical Chemistry, University of Tsukuba).
According to the Research Institute of Production, the LED has two major features: (1) the luminous efficiency continues to increase even when the large current is turned on, and (2) the high temperature resistance. For example, even if a current having a current density of more than 2000 A/cm 2 is turned on by an electrode having a diameter of 120 μm, the luminous efficiency does not reach saturation, but continues to rise. Currently, deep ultraviolet LEDs using competitive materials of AlGaN-based semiconductors have an operating current density of up to about 500 A/cm 2 .
In terms of high temperature resistance, even if the temperature is raised from room temperature to 420 ° C, the luminous intensity does not decrease, but continues to increase. Unlike ordinary LEDs, diamond LEDs use the principle of "exciton" as the principle of illumination. An exciton is an electron-hole pair that moves like a particle. However, under normal circumstances it is not heat resistant and most excitons will soon break down. The excitons generated by diamond LEDs are “very stable, even if they are not broken at a temperature of 600 °C†(Mr. Makino, a special researcher at the Department of Power and Energy Research, Research Institute of Energy Technology, ITRI). This is the reason for the high temperature resistance.
Will achieve significant cost reduction soon
Previously, the price of diamond used as a diamond LED backplane was very high, and only a diamond substrate of several mm square was obtained, which could not reach a practical level. In response to this, Makino said: "The technology of laminating polycrystalline diamond semiconductor films on silicon wafers is currently under development. The efficiency is only one digit lower than the LEDs developed this time. Due to the extremely common materials such as silicon and methane, When put into practical use, diamond LEDs can be manufactured at very low cost." Illuminated demonstration of diamond LED developed by Japan Research Institute. Visible light is not the original ultraviolet ray, but visible light generated by angular defects or the like. The actual intensity (unit wavelength) is about 20 times the visible light.
The deep-UV LED developed this time uses a design of stacking a pin-structured diamond semiconductor on a 2 mm square diamond substrate. A deep ultraviolet ray having an emission wavelength of 235 nm is used. The output power at a current of 320 mA is 30 μW. “At present, it is close to the practical level†(Shanqi Cong, a principal researcher at the Research Institute of Energy Technology, and a professor of the Department of Mathematical and Physical Chemistry, University of Tsukuba).
According to the Research Institute of Production, the LED has two major features: (1) the luminous efficiency continues to increase even when the large current is turned on, and (2) the high temperature resistance. For example, even if a current having a current density of more than 2000 A/cm 2 is turned on by an electrode having a diameter of 120 μm, the luminous efficiency does not reach saturation, but continues to rise. Currently, deep ultraviolet LEDs using competitive materials of AlGaN-based semiconductors have an operating current density of up to about 500 A/cm 2 .
In terms of high temperature resistance, even if the temperature is raised from room temperature to 420 ° C, the luminous intensity does not decrease, but continues to increase. Unlike ordinary LEDs, diamond LEDs use the principle of "exciton" as the principle of illumination. An exciton is an electron-hole pair that moves like a particle. However, under normal circumstances it is not heat resistant and most excitons will soon break down. The excitons generated by diamond LEDs are “very stable, even if they are not broken at a temperature of 600 °C†(Mr. Makino, a special researcher at the Department of Power and Energy Research, Research Institute of Energy Technology, ITRI). This is the reason for the high temperature resistance.
Will achieve significant cost reduction soon
Previously, the price of diamond used as a diamond LED backplane was very high, and only a diamond substrate of several mm square was obtained, which could not reach a practical level. In response to this, Makino said: "The technology of laminating polycrystalline diamond semiconductor films on silicon wafers is currently under development. The efficiency is only one digit lower than the LEDs developed this time. Due to the extremely common materials such as silicon and methane, When put into practical use, diamond LEDs can be manufactured at very low cost." Illuminated demonstration of diamond LED developed by Japan Research Institute. Visible light is not the original ultraviolet ray, but visible light generated by angular defects or the like. The actual intensity (unit wavelength) is about 20 times the visible light.
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